Young S. Lee
33Patents
16h-index
57Co-inventors
84Inventor score
Filing activity: Nov 2, 1993 → Jul 16, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7678715B2 | Low wet etch rate silicon nitride film | Electricity | 499 | Active |
| US7967913B2 | Remote plasma clean process with cycled high and low pressure clean steps | Chemistry; Metallurgy | 459 | Active |
| US8450191B2 | Polysilicon films by HDP-CVD | Electricity | 455 | Active |
| US9412581B2 | Low-K dielectric gapfill by flowable deposition | Electricity | 379 | Active |
| US8642481B2 | Dry-etch for silicon-and-nitrogen-containing films | Electricity | 186 | Active |
| US9064816B2 | Dry-etch for selective oxidation removal | Electricity | 185 | Active |
| US8808563B2 | Selective etch of silicon by way of metastable hydrogen termination | Electricity | 184 | Active |
| US9093390B2 | Conformal oxide dry etch | Electricity | 184 | Active |
| US8679982B2 | Selective suppression of dry-etch rate of materials containing both silicon and oxygen | Electricity | 183 | Active |
| US8801952B1 | Conformal oxide dry etch | Electricity | 183 | Active |
| US8679983B2 | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen | Electricity | 182 | Active |
| US8771536B2 | Dry-etch for silicon-and-carbon-containing films | Electricity | 181 | Active |
| US9236266B2 | Dry-etch for silicon-and-carbon-containing films | Electricity | 151 | Active |
| US9418858B2 | Selective etch of silicon by way of metastable hydrogen termination | Electricity | 137 | Active |
| US7910491B2 | Gapfill improvement with low etch rate dielectric liners | Electricity | 86 | Active |
| US7524750B2 | Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD | Electricity | 39 | Active |
| US5424107A | Reinforced corner structure for cloth | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7740706B2 | Gas baffle and distributor for semiconductor processing chamber | Electricity | 13 | Active |
| US7745350B2 | Impurity control in HDP-CVD DEP/ETCH/DEP processes | Electricity | 10 | Active |
| US7799704B2 | Gas baffle and distributor for semiconductor processing chamber | Chemistry; Metallurgy | 9 | Active |
| US7229931B2 | Oxygen plasma treatment for enhanced HDP-CVD gapfill | Electricity | 8 | Expired |
| US7766510B2 | Cooling structure for street lamp using light emitting diode | Emerging Cross-Sectional Technologies | 7 | Active |
| US7972968B2 | High density plasma gapfill deposition-etch-deposition process etchant | Electricity | 6 | Active |
| US7651587B2 | Two-piece dome with separate RF coils for inductively coupled plasma reactors | Electricity | 6 | Expired |
| US7704897B2 | HDP-CVD SiON films for gap-fill | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.