Stud electrode and process for making same
US7230292B2 · kind B2 · utility
35Cited by
77References
69Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 5, 2003 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Sep 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically conductive seed film in a contact corridor of the dielectric stack. A storage cell stud is also disclosed. The storage cell stud can be employed in a dynamic random-access memory device. An electrical system is also disclosed that includes the storage cell stud.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.