Feature optimization using enhanced interference mapping lithography
US7231629B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 29, 2004 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Jun 17, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed concepts include a method of, and program product for, optimizing an intensity profile of a pattern to be formed in a surface of a substrate relative to a given mask using an optical system. Steps include mathematically representing resolvable feature(s) from the given mask, generating a mathematical expression, an eigenfunction, representing certain characteristics of the optical system, modifying the mathematical the eigenfunction by filtering, generating an interference map in accordance with the filtered eigenfunction and the mathematical expression of the given mask, and determining assist features for the given mask based on the interference map. As a result, undesired printing in the surface of the substrate may be minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.