Method of forming thin film for improved productivity
US7232492B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2004 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Jan 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a method of forming a thin film for providing improved fabrication productivity. The method includes introducing a semiconductor substrate into a process chamber. A process thin film is formed on the semiconductor substrate, in which a chamber coating layer is formed on inner walls of the process chamber while the process thin film is formed. The semiconductor substrate is removed from the process chamber. A stress relief layer is formed on the chamber coating layer. After all of the above operations are repeatedly performed at least one time, an in-situ cleaning is performed on the chamber coating layer and the stress relief layer, which are alternately formed in stack on the inner walls of the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.