Treatment of a removed layer of silicon-germanium
US7232737B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 2, 2005 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Nov 23, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a structure that includes a removed layer taken from a donor wafer donor wafer that includes a first layer of Si1-xGex and a second layer of Si1-yGey. The method includes implanting atomic species into the donor wafer to form a zone of weakness in the first layer; bonding the donor wafer to a receiver wafer; detaching the second layer and a portion of the first layer from the donor wafer by supplying energy sufficient to cause cleavage and form an intermediate structure thereof conducting a rapid thermal anneal of the intermediate structure at a temperature of about 1000° C. or more for less than 5 minutes; and removing by selective etching any remaining portions of the first layer of the intermediate structure to provide a semiconductor structure that has the second layer on the receiving wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.