Multifunctional metallic bonding
US7232739B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 7, 2006 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Jun 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by a non-destructive mechanical release.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.