Conductor treating single-wafer type treating device and method for semi-conductor treating
US7235137B2 · kind B2 · utility
712Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2001 |
| Grant date | Jun 26, 2007 |
| Priority date | — |
| Expiry date | Jul 10, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B31/16
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single-substrate processing apparatus (20) has a worktable (40) disposed in a process chamber (24), which accommodates a target substrate (W). The worktable (40) has a thermally conductive mount surface (41) to place the target substrate (W) thereon. The worktable (40) is provided with a flow passage (50) formed therein, in which a thermal medium flows for adjusting temperature of the target substrate (W) through the mount surface (41). The flow passage (50) is connected to a thermal medium supply system (54), which selectively supplies a cooling medium and a heating medium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.