Method of making empty space in silicon
US7235456B2 · kind B2 · utility
25Cited by
10References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2006 |
| Grant date | Jun 26, 2007 |
| Priority date | — |
| Expiry date | Jan 27, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12097
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.