Transitional dielectric layer to improve reliability and performance of high dielectric constant transistors
US7235502B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2005 |
| Grant date | Jun 26, 2007 |
| Priority date | — |
| Expiry date | May 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate dielectric structure (201) fabrication process includes forming a transitional dielectric film (205) overlying a silicon oxide film (204). A high dielectric constant film (206) is then formed overlying an upper surface of the transitional dielectric film (205). The composition of the transitional dielectric film (205) at the silicon oxide film (204) interface primarily comprises silicon and oxygen. The high K dielectric (206) and the composition of the transitional dielectric film (205) near the upper surface primarily comprise a metal element and oxygen. Forming the transitional dielectric film (205) may include forming a plurality of transitional dielectric layers (207) where the composition of each successive transitional dielectric layer (207) has a higher concentration of the metal element and a lower concentration of silicon. Forming the transitional dielectric layer (205) may include performing multiple cycles of an atomic layer deposition process (500) where a precursor concentration for each cycle differs from the precursor concentration of the preceding cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.