Low dielectric constant film material, film and semiconductor device using such material
US7235866B2 · kind B2 · utility
1Cited by
10References
3Claims
0Family size
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Key dates
| Filing date | Aug 17, 2005 |
| Grant date | Jun 26, 2007 |
| Priority date | — |
| Expiry date | Feb 2, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.