Patent · US Expired

Methods for marking a bare semiconductor die including applying a tape having energy-markable properties

US7238543B2 · kind B2 · utility

10Cited by
300References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 18, 2005
Grant dateJul 3, 2007
Priority date
Expiry dateNov 18, 2025

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/977
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method used for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The present method comprises reducing the cross-section of a wafer or device, applying a tape having optical energy-markable properties over a surface or edge of the wafer or device, and exposing the tape to an optical energy source to create an identifiable mark. A method for manufacturing an integrated circuit chip and for identifying a known good die are also disclosed. The apparatus of the present invention comprises a multilevel laser-markable tape for application to a bare semiconductor die. In the apparatus, an adhesive layer of the tape provides a homogenous surface for marking subsequent to exposure to electromagnetic radiation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.