Flash memory device and method of manufacturing the same
US7238574B1 · kind B1 · utility
4Cited by
0References
12Claims
0Family size
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Key dates
| Filing date | Jun 30, 2006 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Jun 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
Abstract
A non-volatile memory device has a gate dielectric film formed between a floating gate and a control gate. The gate dielectric film is formed by forming an oxide film and a ZrO2/Al2O3/ZrO2 (ZAZ) film. Accordingly, the reliability of non-volatile memory devices can be improved while securing a high coupling ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.