Phase change memory device employing thermally insulating voids and sloped trench, and a method of making same
US7238959B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 1, 2004 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Aug 20, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device, and method of making the same, that includes a trench formed in insulation material having opposing sidewalls that are inwardly sloping with trench depth. A first electrode is formed in the trench. Phase change memory material is formed in electrical contact with the first electrode. A second electrode is formed in electrical contact with the phase change memory material. Voids are formed in the insulation material to impede heat from the phase change memory material from conducting away therefrom. The voids are formed in pairs, with either a portion of the phase change memory material or the second electrode disposed between the voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.