Low-k B-doped SiC copper diffusion barrier films
US7239017B1 · kind B1 · utility
38Cited by
25References
7Claims
0Family size
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Key dates
| Filing date | Aug 9, 2004 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Jan 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.