Magnetic tunnel junction current sensors
US7239543B2 · kind B2 · utility
10Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2005 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Dec 23, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes an active circuit component and a current sensor. The active circuit component may be coupled between a first conductive layer and a second conductive layer, and is configured to produce a first current. The current sensor is disposed over the active circuit component. The current sensor may includes a Magnetic Tunnel Junction (“MTJ”) core disposed between the first conductive layer and the second conductive layer. The MTJ core is configured to sense the first current and produce a second current based on the first current sensed at the MTJ core.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.