FinFET body contact structure

US7241649B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Richard Lee Donze · Rochester, US
• Karl R. Erickson · Rochester, US
• William Paul Hovis · Rochester, US
• Terrance Wayne Kueper · Rochester, US
• John E. Sheets, II · Zumbrota, US
• Jon Robert Tetzloff · Rochester, US

Key dates

• Filing date: Oct 29, 2004
• Grant date: Jul 10, 2007
• Expiry date: May 17, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A FinFET body contact structure and a method for creating the FinFET body contact structure are disclosed. The body contact structure comprises a wide fin portion of a semiconductor fin, the wide fin portion having a polysilicon polygon shape formed on a top surface of the wide fin portion. The polysilicon polygon shape has a center area having no polysilicon. FinFETs are formed on two vertical surfaces of the wide fin portion and gates of the FinFETs are coupled to the polysilicon polygon shape. Top surfaces of the wide fin portion and the polysilicon polygon shape are silicided. Silicide bridging is prevented by sidewall spacers. All convex angles on the polysilicon polygon shape are obtuse enough to prevent creation of bridging vertices. The center area is doped of an opposite type from a source and a drain of an associated FinFET.