Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US7244336B2 · kind B2 · utility
46Cited by
13References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2003 |
| Grant date | Jul 17, 2007 |
| Priority date | — |
| Expiry date | Jul 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.