Semiconductor device and manufacturing method thereof
US7244643B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2002 |
| Grant date | Jul 17, 2007 |
| Priority date | — |
| Expiry date | Mar 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The object of the present invention is to provide a semiconductor device comprising an n-type channel field effect transistor and a p-type channel field effect transistor, which has a high degree of reliability and excellent drain current characteristics. The gist of the invention for attaining the object resides in disposing a silicon nitride film to the side wall of a trench for an active region in which the n-type channel field effect transistor is formed and disposing the silicon nitride film only in the direction perpendicular to the channel direction to the sidewall of the trench for the active region of the p-type channel field effect transistor. According to the present invention, a semiconductor device comprising an n-type channel field effect transistor and a p-type channel field effect transistor of excellent current characteristics can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.