Pixel design to improve photodiode capacitance and method of forming same
US7244646B2 · kind B2 · utility
1Cited by
10References
26Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 23, 2005 |
| Grant date | Jul 17, 2007 |
| Priority date | — |
| Expiry date | Mar 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated photodiodes is provided. The shared active area region isolates the two adjacent photodiodes and provides good substrate to surface pinned layer contact without the presence of n− type dopant ions and due to the presence of p-type dopant ions. As a result, the size of the imager can be reduced and the photodiodes of the two adjacent pixels have increased capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.