Low stress STI films and methods

US7244658B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Ellie Yieh · San Jose, US
• Lung-Tien Han · San Jose, US
• Anchuan Wang · San Jose, US
• Lin Zhang · Qiaonanxiang, CN

Key dates

• Filing date: Oct 17, 2005
• Grant date: Jul 17, 2007
• Expiry date: Oct 17, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0.1 and 25 atomic % of the stress-lowering dopant.