Method of polishing a tungsten-containing substrate
US7247567B2 · kind B2 · utility
13Cited by
15References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2004 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Jan 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.