Semiconductor device and method for fabricating the semiconductor device

US7247948B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Harry Hedler · Germering, DE
• Roland Irsigler · Munich, DE
• Thorsten Meyer · Regensburg, DE

Key dates

• Filing date: Apr 30, 2004
• Grant date: Jul 24, 2007
• Expiry date: Sep 10, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device has a semiconductor substrate, at least a first and second rewiring device on a first surface of the semiconductor substrate for the provision of an electrical contact-connection of the semiconductor substrate, and a tapering, continuous opening from a first surface to a second, opposite surface of the semiconductor substrate. At least a third and fourth rewiring device is disposed on the second surface of the semiconductor substrate and a patterned metallization on the side areas of the opening for the separate contact-connection of the first and at least the second rewiring device.