Metal insulator metal (MIM) capacitor fabrication with sidewall spacers and aluminum cap (ALCAP) top electrode
US7250334B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2004 |
| Grant date | Jul 31, 2007 |
| Priority date | — |
| Expiry date | Jan 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method (10) of forming a MIM (metal insulator metal) capacitor is disclosed whereby adverse affects associated with copper diffusion are mitigated even as the capacitor is scaled down. A sidewall spacer (156) is formed against an edge (137) of a layer of bottom electrode/copper diffusion barrier material (136), an edge (151) of a layer of capacitor dielectric material (150) and at least some of an edge (153) of a layer of top electrode material. The sidewall spacer (156) is dielectric or non-conductive and mitigates “shorting” currents that can develop between the plates as a result of copper diffusion. Bottom electrode diffusion barrier material (136) mitigates copper diffusion and/or copper drift, thereby reducing the likelihood of premature device failure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.