Single step, high temperature nucleation process for a lattice mismatched substrate
US7250360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2005 |
| Grant date | Jul 31, 2007 |
| Priority date | — |
| Expiry date | Jul 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A single step process for nucleation and subsequent epitaxial growth on a lattice mismatched substrate is achieved by pre-treating the substrate surface with at least one group III reactant or at least one group II reactant prior to the introduction of a group V reactant or a group VI reactant. The group III reactant or the group II reactant is introduced into a growth chamber at an elevated growth temperature to wet a substrate surface prior to any actual crystal growth. Once the pre-treatment of the surface is complete, a group V reactant or a group VI reactant is introduced to the growth chamber to commence the deposition of a nucleation layer. A buffer layer is then grown on the nucleation layer providing a surface upon which the epitaxial layer is grown preferably without changing the temperature within the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.