Cleaning composition for removing resists and method of manufacturing semiconductor device
US7250391B2 · kind B2 · utility
35Cited by
11References
9Claims
0Family size
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Key dates
| Filing date | Jul 11, 2003 |
| Grant date | Jul 31, 2007 |
| Priority date | — |
| Expiry date | Oct 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one organic acid or inorganic acid (C component), water (D component), and, optionally, an ammonium salt (E1 component), and having a pH 4-8. Thus, in manufacturing a semiconductor device, such as a copper interconnecting process, efficiency of removing resist residue and other etching residue after etching or ashing is improved, and corrosion resistance of a copper and an insulating film is also improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.