Memory circuit having memory cells which have a resistance memory element
US7251152B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 26, 2005 |
| Grant date | Jul 31, 2007 |
| Priority date | — |
| Expiry date | Aug 26, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/75
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a memory circuit having memory cells which are connected in series between a ground line PL and a bit line BL and in each case have a resistance memory element said element having a bipolar switching behavior having an anode electrode and a cathode electrode, and a drive transistor connected in parallel with the resistance memory element, the drive transistors of the memory cells in each case are connected to a word line in order to switch the drive transistor on and off in such a way that a current path is formed via the associated drive transistor in a non-activated state of a memory cell and a current path is formed via the associated resistance memory element in an activated state of a memory cell, a first changeover switch being arranged at one end and a second changeover switch at other ends of the series of memory cells in order alternately to produce a connection between the series-connected memory cells and the ground line and the bit line in a manner dependent on an applied address.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.