Low doped layer for nitride-based semiconductor device

US7253015B2 · kind B2 · utility

Assignee

• Velox Semiconductor Corporation · US

Inventors

• Milan Pophristic · New Brunswick, US
• Michael Murphy · Long Beach, US
• Richard A. Stall · Montgomery, US
• Bryan Shelton · Bound Brook, US
• Linlin Liu · Fryeburg, US
• Alex Ceruzzi · Princeton Junction, US

Key dates

• Filing date: Feb 17, 2004
• Grant date: Aug 7, 2007
• Expiry date: Apr 23, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer disposed atop a much more highly doped nitride semiconductor layer. The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased.