Semiconductor memory device and manufacturing method thereof
US7253046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2005 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Jul 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.