Transistor device and method of manufacture thereof

US7253050B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hongfa Luan · Austin, US
• Hong Li · 安丰镇, CN

Key dates

• Filing date: Dec 20, 2004
• Grant date: Aug 7, 2007
• Expiry date: May 10, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0177

Abstract

Methods of forming CMOS devices and structures thereof. A workpiece is provided having a first region and a second region. A high k gate dielectric material is formed over the workpiece. A first gate material comprising a first metal is formed over the high k gate dielectric material. The first gate material in the second region is implanted with a material different than the first metal to form a second gate material comprising a second metal. The work function of the CMOS device is set by the material selection of the gate materials.