Heat treatment apparatus and heat treatment method of substrate
US7255899B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 7, 2002 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Feb 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heat diffusion plate and a heating plate are placed in a heat treatment chamber in this order. The heating plate is used for preliminarily heating a glass substrate to a temperature in a range from 200° C. to 400° C. The glass substrate thus preliminarily heated is subjected to a heat treatment by flash light irradiation by a xenon flash lamp. The flash light irradiation makes it possible to uniformly heat an amorphous silicon film on the glass substrate, and consequently to be poly-crystallized. Thus, it becomes possible to provide a heat treatment technique capable of carrying out a uniform heat treatment on the silicon film on the glass substrate sufficiently.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.