Methods for preparing a semiconductor assembly
US7256101B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2004 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Apr 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/823
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for preparing a semiconductor assembly are disclosed. In an implementation, the technique includes providing a support substrate and a bonding surface thereon, providing a donor substrate having a weakened zone that defines a useful layer and a bonding surface on the useful layer, and providing an interface layer of a predetermined material on the bonding surface of either the support substrate or the useful layer to provide a bonding surface thereon. The method also includes molecularly bonding the bonding surface of the interface layer to the bonding surface of the other of the support substrate or the useful layer to form a separable bonding interface therebetween, and to thus form the semiconductor assembly, and heat treating the semiconductor assembly to a temperature of at least 1000 to 1100° C. without substantially increasing molecular bonding between the bonding surface of the interface layer and the bonding surface of the other of the support substrate or the useful layer, so that the separable bonding interface maintains a sufficiently weak bond that can later be overcome by applying stresses to detach the useful layer from the donor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.