Method for manufacturing a compound material wafer
US7256103B2 · kind B2 · utility
0Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2004 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Oct 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for manufacturing a compound material wafer. The technique includes forming a weakened zone in a source substrate, attaching the source substrate to a handle substrate to form a source-handle assembly, and thermally annealing the source-handle assembly to further weaken the weakened zone. The method also includes holding the assembly at a holding temperature, and detaching the source substrate from the assembly at the weakened zone at the holding temperature. The holding temperature is greater than room temperature but does not promote further weakening of the weakened zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.