Pretreatment for electroless deposition
US7256111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2004 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Jun 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/288
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heating the substrate in a vacuum environment while providing a gas, such as noble gases, hydrogen gas, other reducing gases, nitrogen gas, other non-reactive gases, and combinations thereof. In another embodiment, annealing in a plasma chamber comprises plasma annealing the substrate in a plasma, such as a plasma from an argon gas, helium gas, hydrogen gas, and combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.