Self-patterning of photo-active dielectric materials for interconnect isolation
US7256136B2 · kind B2 · utility
0Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2006 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Feb 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with the objectives of the invention a new method is provided for the creation of an interconnect pattern. The invention provides for a layer of Photo-Active Dielectric (PAD) to be used for the insulation material in which the interconnect pattern is created, this without the use of an overlying exposure mask of photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.