One time programmable memory cell
US7256446B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2005 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | May 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/25
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This invention discloses a one-time programmable (OTP) memory cell. The OTP memory cell includes a dielectric layer disposed between two conductive polysilicon segments wherein the dielectric layer is ready to change from a non-conductive state to a conductive state through an induced voltage breakdown. In a preferred embodiment, one of the conductive polysilicon segments further includes an etch undercut configuration for conveniently inducing the voltage breakdown in the dielectric layer. In a preferred embodiment, the dielectric layer is further formed as sidewalls covering the edges and corners of a first polysilicon segments to conveniently induce a voltage breakdown in the dielectric layer by the edge and corner electrical field effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.