Bipolar transistor

US7256472B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Josef Bock · Birkenfeld, DE
• Thomas Meister · Taufkirchen, DE
• Andriy Romanyuk · Schliersee, DE
• Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE

Key dates

• Filing date: Jul 11, 2003
• Grant date: Aug 14, 2007
• Expiry date: Jul 11, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/281

Abstract

A bipolar transistor and method of making a bipolar transistor is disclosed. In one embodiment, the bipolar transistor includes a polysilicon layer into which impurity atoms are inserted, thereby reducing the layer resistance.