Method for writing data into a memory cell of a conductive bridging random access memory, memory circuit and CBRAM memory circuit
US7257013B2 · kind B2 · utility
11Cited by
6References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 8, 2005 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Sep 8, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention refers to a method for writing data into a memory cell of a conductive bridging random access memory and to a memory circuit comprising memory cells with programmable metallization cells, particularly a CBRAM memory circuit. The embodiments of the prevent invention provide a method and a memory circuit for holding adjacently arranged bit lines at writing voltages during a writing operation of a selected memory cell to reduce voltage crosstalk.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.