Patent · US Expired

Test mode for IPP current measurement for wordline defect detection

US7257038B2 · kind B2 · utility

4Cited by

4References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Killian · South Burlington, US
Martin Versen · Hersbruck, DE
Grant McNeil · Williston, US
Zach Johnson · Woodinville, US
Changduk Kim · South Burlington, US

Key dates

Filing date	Jan 3, 2006
Grant date	Aug 14, 2007
Priority date	—
Expiry date	Jan 22, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C2029/5006
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A semiconductor integrated circuit memory device, and test method for a memory device are provided in which an external wordline voltage is applied to a wordline of the memory device. A current on the wordline is measured as a result of application of the externally supplied wordline voltage. The measured current is compared to a reference value to determine whether the wordline has a defect, in particular a short-circuit defect. A tester device is connected to the memory device and supplies the external wordline voltage. The current measurement and comparison may be made internally by circuitry on the memory device or externally by circuitry in a tester device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.