Method of treating a substrate in manufacturing a magnetoresistive memory cell

US7259024B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stefan Ottow · Dresden, DE
• Kim Woosik · Boissettes, FR
• Rainer Leuschner · Regensburg, DE

Key dates

• Filing date: Jul 7, 2005
• Grant date: Aug 21, 2007
• Expiry date: Sep 23, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/906

Abstract

A method of treating a substrate in manufacturing a magnetoresistive memory cell includes performing a cleaning operation on the substrate using a mask layer as a protection layer for etching of a peripheral via. Further, an etch stop layer can used as a protection layer in a cleaning operation on the substrate.