Memory device and methods of using and making the device
US7259039B2 · kind B2 · utility
4Cited by
10References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2004 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Apr 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/342
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active low conductive layer and passive layer. The controllably conductive media changes its impedance when an external stimuli such as an applied electric field is imposed thereon. Methods of making the memory devices/cells, methods of using the memory devices/cells, and devices such as computers containing the memory devices/cells are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.