Control system for multi-layer chemical mechanical polishing process and control method for the same
US7259097B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2005 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Nov 10, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/959
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for controlling an apparatus to perform a multi-layer chemical mechanical polishing (CMP) process with a polishing rate for a plurality of process runs. For each process run, a multilayered structure with a first thickness formed on a wafer is polished and a second thickness of the multilayered structure is predetermined to be polished away. The method comprises steps of receiving a post-CMP thickness information of the multilayered structure of a first process run, wherein for the first process run, the CMP process is performed for a first CMP process time. Then, a second CMP process time is determined according to the first CMP process time, the first thickness and the post-CMP thickness. Further, the second CMP process time is provided to the apparatus for processing a second process run posterior to the first process run.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.