Yi-Ching Wu
29Patents
6h-index
54Co-inventors
72Inventor score
Filing activity: Aug 3, 2000 → Sep 6, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7468326B2 | Method of cleaning a wafer | Electricity | 19 | Expired |
| US7229896B2 | STI process for eliminating silicon nitride liner induced defects | Electricity | 15 | Expired |
| US7286388B1 | Resistive memory device with improved data retention | Physics | 11 | Expired |
| US8921947B1 | Multi-metal gate semiconductor device having triple diameter metal opening | Electricity | 10 | Active |
| US8536038B2 | Manufacturing method for metal gate using ion implantation | Electricity | 9 | Active |
| US8692310B2 | Gate fringing effect based channel formation for semiconductor device | Electricity | 7 | Active |
| US7273824B2 | Semiconductor structure and fabrication therefor | Emerging Cross-Sectional Technologies | 3 | Expired |
| US9064814B2 | Semiconductor structure having metal gate and manufacturing method thereof | Electricity | 3 | Active |
| US9570458B2 | Gate fringing effect based channel formation for semiconductor device | Electricity | 3 | Active |
| US6468553B1 | Formula and preparation method of an improved ointment for treating burns and scalds | Human Necessities | 2 | Expired |
| US9040315B2 | Method for planarizing semiconductor devices | Electricity | 1 | Active |
| US7259097B2 | Control system for multi-layer chemical mechanical polishing process and control method for the same | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7848146B2 | Partial local self-boosting of a memory cell channel | Physics | 1 | Active |
| US9378968B2 | Method for planarizing semiconductor device | Electricity | 1 | Active |
| US7606021B2 | Metal-insulator-metal capacitor and method for fabricating the same | Emerging Cross-Sectional Technologies | 1 | Active |
| US8076213B2 | Method for fabricating a metal-insulator-metal capacitor | Emerging Cross-Sectional Technologies | 0 | Active |
| US7894243B2 | Methods of programming and erasing resistive memory devices | Physics | 0 | Active |
| US11588612B2 | Communication chip | Electricity | 0 | Active |
| US11287898B2 | Backlight module and illuminated keyboard | Physics | 0 | Active |
| US11171608B2 | Mixing circuit | Electricity | 0 | Active |
| US7916523B2 | Method of erasing a resistive memory device | Physics | 0 | Active |
| US10297606B2 | Gate fringing effect based channel formation for semiconductor device | Electricity | 0 | Active |
| US12413211B2 | Frequency mixing circuit with multi-transistor architecture | Electricity | 0 | Active |
| US7384800B1 | Method of fabricating metal-insulator-metal (MIM) device with stable data retention | Emerging Cross-Sectional Technologies | 0 | Active |
| US8520987B2 | Method of fabricating an optical transformer | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.