Avalanche photodiode
US7259408B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2005 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Dec 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/225
Abstract
An objective is to provide an avalanche photodiode that is excellent in device characteristics such as reliability. An avalanche photodiode is provided, which includes a substrate 1 formed with a light receiving region 3 on a multiplication layer 119, and formed with layers of differing semiconductor type with the multiplication layer 119 intervening, a ring-shaped groove 7 formed on the end face of the substrate 1 on its light-receiving-region side, in such a way that the groove surrounds the light receiving region 3, and one or more steps 5 provided on a side wall of the ring-shaped groove 7, in a range of from ¼ to ¾ of the depth of the groove. In the avalanche photodiode described above, because one or more steps provided on the side wall of the ring-shaped groove in the range of from ¼ to ¾ of the depth of the groove, discontinuity at the edge of the ring-shaped groove can be effectively prevented from occurring; consequently, an avalanche photodiode excellent in device characteristics such as reliability can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.