Integrated circuit with increased heat transfer
US7259458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2005 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Apr 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique for improving the thermal power dissipation of an integrated circuit includes reducing the thermal resistivity of the integrated circuit by increasing heat transfer in vertical and/or lateral directions. These results are achieved by increasing the surface area of the backside and/or the surface area of the lateral sides of the integrated circuit die. In some embodiments of the invention, an integrated circuit includes circuit elements formed closer to a first surface of a semiconductor substrate than to a second surface of the semiconductor substrate. The semiconductor substrate has a varying profile that substantially increases the surface area of a thermal interface formed on the second surface as compared to the second surface being substantially planar. A maximum depth of the profile is less than the thickness of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.