Patent · US Expired

Integrated circuit yield enhancement using Voronoi diagrams

US7260790B2 · kind B2 · utility

9Cited by
8References
33Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 27, 2004
Grant dateAug 21, 2007
Priority date
Expiry dateMay 31, 2025

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F30/398
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method of calculating critical area in an integrated circuit design, said method comprising: inputting an integrated circuit design; associating variables with the positions of edges in said integrated circuit design; and associating cost functions of said variables with spacing between said edges in said integrated circuit design; wherein said cost functions calculate critical area contributions as the positions and length of said edges in said integrated circuit design change, and wherein said critical area contributions comprise a measure of electrical fault characteristics of said spacing between said edges in said integrated circuit design.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.