Integrated circuit yield enhancement using Voronoi diagrams
US7260790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2004 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | May 31, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/398
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of calculating critical area in an integrated circuit design, said method comprising: inputting an integrated circuit design; associating variables with the positions of edges in said integrated circuit design; and associating cost functions of said variables with spacing between said edges in said integrated circuit design; wherein said cost functions calculate critical area contributions as the positions and length of said edges in said integrated circuit design change, and wherein said critical area contributions comprise a measure of electrical fault characteristics of said spacing between said edges in said integrated circuit design.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.