Patent · US Expired

Method for masking a recess in a structure having a high aspect ratio

US7261829B2 · kind B2 · utility

4Cited by

7References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Dirk Efferenn · Dresden, DE
Hans-Peter Moll · Dresden, DE

Key dates

Filing date	Jan 8, 2003
Grant date	Aug 28, 2007
Priority date	—
Expiry date	Apr 26, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0337
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for selective masking is described. In this case, a filling material is applied to a structure which, as a function of the aspect ratio of the structure, forms cavities when the aspect ratio is high. The filling layer is then removed as far as the cavities and, using an etching process, filling material is removed completely from the recesses in which the cavities are formed. In this way, areas are exposed selectively.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.