Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
US7262064B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2002 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Sep 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/18
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.