Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation
US7262116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2006 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Apr 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.