Microfeature workpieces and methods for forming interconnects in microfeature workpieces
US7262134B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2005 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Sep 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming interconnects in microfeature workpieces, and microfeature workpieces having such interconnects are disclosed herein. In one embodiment, a method of forming an interconnect in a microfeature workpiece includes forming a hole extending through a terminal and a dielectric layer to at least an intermediate depth in a substrate of a workpiece. The hole has a first lateral dimension in the dielectric layer and a second lateral dimension in the substrate proximate to an interface between the dielectric layer and the substrate. The second lateral dimension is greater than the first lateral dimension. The method further includes constructing an electrically conductive interconnect in at least a portion of the hole and in electrical contact with the terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.