Bit line structure and production method thereof

US7262456B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ronald Kakoschke · Birkenfeld, DE
• Franz Schuler · Kreßbronn, DE
• Georg Tempel · Zorneding, DE

Key dates

• Filing date: Nov 14, 2005
• Grant date: Aug 28, 2007
• Expiry date: Nov 14, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00

Abstract

The disclosure relates to a bit line structure and an associated production method for the bit line structure. In the bit line structure, at least in a region of a second contact and a plurality of first contact adjoining the latter, an isolation trench is filled with an electrically conductive trench filling layer. The isolation trench connects to the first doping regions adjoining the second contact for the purpose of realizing a buried contact bypass line.